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STI 6610
STI 6610

STI 6110 is suitable for a range of technical nodes, including shallow trench isolation/dielectric layer polishing for logic circuits and memory

Has a very good stopping effect on silicon nitride

Using high-purity self-developed cerium dioxide powder, the extremely small primary particle size can reduce defects such as scratches

Used for STI process in logic circuits and memory

Concentrated formula with attractive usage cost

Cerium dioxide powder can be collaboratively developed/customized to meet customers' advanced performance requirements