CSR 5100 is suitable for fast removal of TSV Copper with micron line width

High dilution ratio polishing solution products for metal applications with micrometer thickness

Improve the removal rate of TSV copper polishing process production capacity

Excellent barrier layer (Ta/TEOS) selectivity

Low defect rate

The morphology after copper removal meets the requirements of TSV

BSR 8300 is suitable for CMP processes such as TSV Front side and TSV Back side with micron line widths

Low selectivity ratio can be applied to multi dielectric polishing of TSV Cu/Barrier, Si/Cu, SIN/TEOS/Cu, etc

Adjusting H2O2% can effectively regulate the polishing rate of Cu and obtain the desired selectivity ratio

Low defect rate

The morphology after removing copper and other dielectrics meets the requirements of TSV