Ceria slurry
Complete turnkey solution to meet the polishing requirements of ILD. The ceria powder that conforms to the semiconductor CMP process is between 30-300 nanometers.
In addition to providing effective grinding particles in the formula, we also added our self-developed dispersing materials on top of a good acid-base dispersion system. Suitable for various thin films that remove silicon dioxide.
Different models will be reflected in different removal rates. When selective materials are added, they will exhibit selectivity for removal or protection.
Fumed Ceria
Particle size：80nm~300nm
Application：ILD CMP
According to CMP process requirements, the size and morphology of abrasive particles can be adjusted
Using small-sized particles can provide excellent defect and scratch performance
Milky White
MOFs Ceria
Particle size：5nm~180nm
Application：STI CMP
This CMP process requires adjustable abrasive particle size and morphology
The uniform morphology and low particle size distribution deviation provide excellent defect and scratch performance
Adding different additives can achieve stop on nitride/poly
Milky White
Coprecipitation Ceria+PR
Particle size：180nm~400nm
Application：photo mask/wafer glass
Cerium oxide grinding particles add PR elements in the production process
Has stronger mechanical grinding characteristics and higher planarization removal rate
Brownish Red
