PSR 6150 is suitable for polishing polycrystalline silicon thin film layers of integrated circuits (Power MOSFET/IGBT) with sub micron line widths

Extremely low removal rate of nitrides and oxides by grinding, and high selectivity compared to polycrystalline silicon film layers

The rate and selectivity of the dielectric can be adjusted

High purity colloidal silica

High flattening efficiency

High dilution ratio polishing solution products meet customers' low-cost expectations